go athena

Non-unifrom Grid

line x loc=0.00 spac=0.10 line x loc=0.20 spac=0.010 line x loc=0.60 spac=0.010

line y loc=0.00 spac=0.008 line y loc=0.20 spac=0.01 line y loc=0.50 spac=0.05 line y loc=0.8 spac=0.15

定义衬底

init silicon c.boron=1.0e14 orientation=100 two.d

生成氧化层

diffus time=30 minutes temp=1000 dryo2 press=1 hcl.pc=3

extract name=“Oxidethick” thickness material=“SiO~2” mat.occno=1 x.val=0.3

沉淀多晶硅层

deposit polysilicon thick=0.2 divisions=10

离子注入

implant arsenic dose=1.0e15 energy=40 tilt=7 rotation=30 crystal

退火

method fermi diffus time=2 minutes temp=1000 nitro press=1

extract name=“Oxidethick” sheet.res material=“Polysilicon” mat.occno=1 x.val=0.3 region.occno=1 semi.poly

刻蚀

etch oxide left p1.x=0.15

刻蚀

etch oxide right p1.x=0.45

氧化多晶硅

method fermi compress diffus time=3 minutes temp=900 weto2 press=1

刻蚀电极接触孔

etch oxide start x=0.25 y=-0.25 etch cont x=0.35 y=-0.25 etch cont x=0.35 y=-0.20 etch done x=0.25 y=-0.20

沉淀多晶硅层

deposit aluminum thick=0.05 divisions=10

刻蚀电极接触孔

etch aluminum left p1.x=0.2

刻蚀电极接触孔

etch aluminum right p1.x=0.4

输出结构

structure outfile=SheetRegister.str

tonyplot

quit